Preparation of AlN, AlN-TiN thin films by RF magnetron sputtering.

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Study of Properties of AlN Thin Films Deposited by Reactive Magnetron Sputtering

Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...

متن کامل

REACTIVE PULSE MAGNETRON SPUTTERING FOR THE DEPOSITION OF HIGH QUALITY AlN THIN FILMS

Aluminium nitride is a promising coating material for many applications, due to its good physical and mechanical properties. Hard transparent Aluminium nitride thin films have been deposited by bipolar reactive pulsed magnetron sputtering (PMS). With its inherent advantages of energetic particle bombardment of the growing film and minimal arcing tendency even in dielectric layer deposition proc...

متن کامل

Characterization of PZT Ferroelectric Thin Films by RF-magnetron Sputtering

By using Radio Frequency (RF) magnetron sputtering method, Pb(Zr0.5Ti0.5)O3 (PZT) thin films were deposited on Pt/Ti/ SiO2/Si substrates. Pt/Ti bottom electrode was fabricated on SiO2/Si substrates by magnetron dual-facing-target sputtering system. Phase and crystalline structure analyses of the PZT films were performed on an X-ray diffraction(XRD), Surface morphology, roughness and particle si...

متن کامل

Ga DOPED ZnO THIN FILMS DEPOSITED BY RF MAGNETRON SPUTTERING – PREPARATION AND PROPERTIES

Gallium doped zinc oxide, GZO, thin films have been deposited onto glass substrate by rf magnetron sputtering at various substrate temperatures. The electrical and optical properties of the thin films have been studied as a function of substrate temperature. X-ray diffraction was used in order to investigate thin film structures. The thin film structure was stabilised by heating the samples in ...

متن کامل

HIGHLY TEXTURED (001) AlN NANOSTRUCTURED THIN FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING FOR SAW AND FBAR APPLICATIONS

Highly oriented (001) AlN (wurtzite type) thin films have been successfully deposited on silicon, platinized silicon and glass substrates by reactive radio-frequency magnetron sputtering at low temperature (150°C). X-ray diffraction, spectroscopic ellipsometry and scanning electron microscopy techniques have been employed to asses the structural characteristics of the AlN films. We have investi...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of the Japan Society of Powder and Powder Metallurgy

سال: 1991

ISSN: 0532-8799,1880-9014

DOI: 10.2497/jjspm.38.339